28 results
Weed species response to phosphorus fertilization
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- Journal:
- Weed Science / Volume 52 / Issue 3 / June 2004
- Published online by Cambridge University Press:
- 20 January 2017, pp. 406-412
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Differential response of weed species to added nitrogen
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- Weed Science / Volume 51 / Issue 4 / August 2003
- Published online by Cambridge University Press:
- 20 January 2017, pp. 532-539
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Fertilizer application method affects nitrogen uptake in weeds and wheat
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- Weed Science / Volume 50 / Issue 5 / October 2002
- Published online by Cambridge University Press:
- 20 January 2017, pp. 634-641
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Nitrogen fertilizer timing and application method affect weed growth and competition with spring wheat
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- Weed Science / Volume 52 / Issue 4 / August 2004
- Published online by Cambridge University Press:
- 20 January 2017, pp. 614-622
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Development of an all-SiC neuronal interface device
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- Journal:
- MRS Advances / Volume 1 / Issue 55 / 2016
- Published online by Cambridge University Press:
- 16 May 2016, pp. 3679-3684
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- 2016
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Contributors
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- Book:
- Human Assisted Reproductive Technology
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- 16 May 2011
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- 31 March 2011, pp ix-xii
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Performance of SiC Microwave Transistors in Power Amplifiers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D10-05
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- 2008
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Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J5.25
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- 2004
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Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.10
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- 2001
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Infrared absorption and annealing behavior of semi-insulating 4H SiC HTCVD substrates
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- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E5.11
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- 2001
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Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H2.1
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- 2000
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Electron Irradiation of 4H SiC by TEM: An Optical Study
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- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H6.5
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- 2000
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Electroluminescence from 4H-SiC Schottky Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
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- 21 March 2011, H4.8
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- 2000
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Deep-level luminescence at 1.0 eV in 6H SiC
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- MRS Online Proceedings Library Archive / Volume 640 / 2000
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- 21 March 2011, H7.11
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- 2000
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HTCVD growth of semi-insulating 4H-SiC crystals with low defect density
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- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H1.2
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- 2000
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Growth and Characterisation of 4H-SiC MESFET structures grown by Hot-Wall CVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H2.3
- Print publication:
- 2000
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Influence of growth parameters on the nitrogen incorporation in 4H- and 6H-SiC epilayers grown by hot-wall chemical vapour deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 637 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, E3.10
- Print publication:
- 2000
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Polytype Stability and Defect Reduction in 4H-SiC Crystals Grown via Sublimation Technique
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
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- 10 February 2011, 265
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- 1999
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Silicon carbide grown by liquid phase epitaxy in microgravity
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- Journal of Materials Research / Volume 13 / Issue 7 / July 1998
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1812-1815
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- July 1998
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Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering
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- Journal of Materials Research / Volume 11 / Issue 10 / October 1996
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2458-2462
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- October 1996
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